Long All-Active Monolithic Mode-Locked Lasers With Surface-Etched Bragg Gratings

Author

Larsson, David ; Yvind, Kresten ; Hvam, Jorn M.

Author_Institution

Tech. Univ. of Denmark, Lyngby

Volume

19

Issue

21

fYear

2007

Firstpage

1723

Lastpage

1725

Abstract

We have fabricated 4.4-mm-long monolithic InAlGaAsP-InP mode-locked lasers with integrated deeply surface etched distributed Bragg reflector (DBR) mirrors. The lasers produce 3.7-ps transform-limited Gaussian pulses with 10-mW average output power and 250-fs absolute timing jitter. The performance of the DBR lasers is compared to the performance of Fabry-Perot mode-locked lasers from the same wafer and to the performance of earlier reported long monolithic DBR mode-locked lasers and is found to be better.

Keywords

Bragg gratings; III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser mirrors; laser mode locking; optical fabrication; DBR lasers; DBR mirrors; Fabry-Perot mode-locked lasers; Gaussian pulses; InAlGaAsP-InP; InAlGaAsP-InP mode-locked lasers; distributed Bragg reflector mirrors; monolithic mode-locked lasers; power 10 mW; size 4.4 mm; surface-etched Bragg gratings; time 250 fs; time 3.7 ps; Bragg gratings; Distributed Bragg reflectors; Etching; Laser mode locking; Mirrors; Optical pulses; Power generation; Power lasers; Surface emitting lasers; Timing jitter; Distributed Bragg reflector (DBR); mode-locked laser diode; optical communications;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.905680

Filename

4343128