• DocumentCode
    923296
  • Title

    Estimate of substrate influence on space-charge-limited current

  • Author

    de Chambost, E.

  • Author_Institution
    Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
  • Volume
    9
  • Issue
    16
  • fYear
    1973
  • Firstpage
    351
  • Lastpage
    353
  • Abstract
    The Mott and Gurney law, which expresses the space-charge-limited current in intrinsic material, cannot be used for planar structures. An I/V curve is plotted for a quasi-intrinsic material. For a doped substrate, the I/V curve is simply displaced by ¿V. In a planar structure, the s.c.l.c. between two n layers, across the p¿ substrate, can be lowered by biasing the substrate.
  • Keywords
    leakage currents; monolithic integrated circuits; space-charge-limited conduction; substrates; integrated circuits; leakage currents; space charge limited conduction; substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730259
  • Filename
    4236207