DocumentCode
923296
Title
Estimate of substrate influence on space-charge-limited current
Author
de Chambost, E.
Author_Institution
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Volume
9
Issue
16
fYear
1973
Firstpage
351
Lastpage
353
Abstract
The Mott and Gurney law, which expresses the space-charge-limited current in intrinsic material, cannot be used for planar structures. An I/V curve is plotted for a quasi-intrinsic material. For a doped substrate, the I/V curve is simply displaced by ¿V. In a planar structure, the s.c.l.c. between two n layers, across the p¿ substrate, can be lowered by biasing the substrate.
Keywords
leakage currents; monolithic integrated circuits; space-charge-limited conduction; substrates; integrated circuits; leakage currents; space charge limited conduction; substrates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730259
Filename
4236207
Link To Document