• DocumentCode
    923759
  • Title

    Coplanar-electrode thin-film InSb transistor

  • Author

    Luo, F.C. ; Epstein, M.

  • Volume
    60
  • Issue
    8
  • fYear
    1972
  • Firstpage
    997
  • Lastpage
    999
  • Abstract
    A thin-film transistor, using very thin flash-evaporated and annealed InSb films as semiconductor in a coplanar-electrode structure, is characterized by a relatively large transconductance and a well-defined saturation region.
  • Keywords
    Breakdown voltage; Electron traps; Insulation; Leakage current; P-n junctions; Photonic band gap; Temperature; Thin film transistors; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1972.8827
  • Filename
    1450757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=923759