• DocumentCode
    923780
  • Title

    Power-generation potential of various IMPATT structures from a scaling approximation

  • Author

    Weller, K.P.

  • Author_Institution
    Hughes Research Laboratories, Torrance, USA
  • Volume
    9
  • Issue
    18
  • fYear
    1973
  • Firstpage
    420
  • Lastpage
    422
  • Abstract
    The power potential of the double-drift and both complementary 1-sided silicon IMPATTS is estimated as a function of frequency, using a scaling approximation that accounts for the dependence of generation efficiency on bias-current density. The results show the n+¿p junction IMPATT to be a superior choice for reliable power generation below 25 GHz, owing to its relatively low threshold-current density.
  • Keywords
    IMPATT devices; current density; microwave generation; solid-state microwave devices; 25 GHz; IMPATT devices; Si; current density; microwave generation; scaling approximation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730308
  • Filename
    4236258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=923780