• DocumentCode
    924148
  • Title

    X-band silicon double-drift IMPATT diodes using multiple epitaxy

  • Author

    Ying, R.S.

  • Volume
    60
  • Issue
    9
  • fYear
    1972
  • Firstpage
    1104
  • Lastpage
    1105
  • Abstract
    Silicon double-drift IMPATT diodes made by consecutive epitaxial deposition have been fabricated successfully. Output power in excess of 1.7 W with 10-percent efficiency was obtained at X band.
  • Keywords
    Boron; Charge carrier processes; Epitaxial growth; Epitaxial layers; Frequency; Impedance; Ion implantation; Semiconductor diodes; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1972.8861
  • Filename
    1450791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=924148