DocumentCode
924632
Title
MOSFET design for forward body biasing scheme
Author
Hokazono, Akira ; Balasubramanian, Sriram ; Ishimaru, Kazunari ; Ishiuchi, Hidemi ; Liu, Tsu-Jae King ; Hu, Chenming
Volume
27
Issue
5
fYear
2006
fDate
5/1/2006 12:00:00 AM
Firstpage
387
Lastpage
389
Abstract
Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme.
Keywords
MOSFET; doping profiles; elemental semiconductors; silicon; 10 nm; 30 nm; CMOS technology; MOSFET design; Si; channel doping profiles; channel engineering; forward body biasing scheme; gate work function engineering; CMOS technology; CMOSFETs; Dielectric substrates; Electrodes; Ion implantation; MOS devices; MOSFET circuits; Power engineering and energy; Research and development; Virtual reality; Body bias; MOSFET; forward bias; reverse bias; substrate bias; work function;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.873382
Filename
1626465
Link To Document