• DocumentCode
    924778
  • Title

    Millimeter-wave GaAs Schottky-barrier IMPATT diodes

  • Author

    Migitaka, M. ; Nakamura, Mitsutoshi ; Saito, Kazuyuki ; Sekine, Keisuke

  • Volume
    60
  • Issue
    11
  • fYear
    1972
  • Firstpage
    1448
  • Lastpage
    1449
  • Abstract
    GaAs Schottky-barrier IMPATT diodes have been made by using liquid-phase GaAs epitaxial wafers. On the diodes, with the heat sink made by copper plating, a maximum power of 725 mW was obtained at 27.48 GHz, and a maximum efficiency of 11.9 percent was obtained at 29.70 GHz.
  • Keywords
    Blades; Diffraction; Epitaxial layers; Face detection; Gallium arsenide; Heat sinks; Millimeter wave technology; Schottky diodes; Substrates; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1972.8925
  • Filename
    1450855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=924778