• DocumentCode
    925411
  • Title

    Electron velocity in n GaAs at high electric fields

  • Author

    Houston, P.A. ; Evans, A.G.R.

  • Author_Institution
    University of Strathclyde, Department of Natural Philosophy, Glasgow, UK
  • Volume
    10
  • Issue
    16
  • fYear
    1974
  • Firstpage
    332
  • Lastpage
    333
  • Abstract
    The velocity of electrons in n GaAs has been measured for electric fields in the range 20¿55 kV/cm by the time-of-flight technique. The velocity was found to decrease slowly wlth increasing electric field, and is 8.09×106 cm/s at 55 kV/cm.
  • Keywords
    III-V semiconductors; carrier mobility; gallium arsenide; high field effects; 20 to 50 KV/cm; III V semiconductors; carrier mobility; electron velocity; gallium arsenide; high field effects; time of flight technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740263
  • Filename
    4236426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925411