Modeling deep-level trap effects in GaAs MESFETs

Author

Son, Ilhun ; Tang, Ting-wei

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

Volume

36

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

632

Lastpage

640

Abstract

Modeling and numerical simulation have been performed to investigate the effects of deep-level-traps (DLTs) on the device characteristics of a GaAs MESFET (metal-semiconductor field-effect transistor). A simplified but realistic model of recombination-generation through DLTs is introduced into the current continuity equations, from which the space-charge contribution of DLTs in Poisson´s equation is also determined. The effects of DLTs on the basic device performance as well as the backgating effect and hysteresis of drain current are analyzed in terms of ionization type, density, and position of the DLT in a two-dimensional numerical simulation

Keywords

III-V semiconductors; Schottky gate field effect transistors; deep levels; electron traps; gallium arsenide; semiconductor device models; DLTs; GaAs; MESFET; Poisson´s equation; backgating effect; current continuity equations; deep-level trap effects; hysteresis; ionization type; numerical simulation; recombination-generation; space-charge contribution; two-dimensional numerical simulation; Gallium arsenide; Hysteresis; Integrated circuit modeling; Ionization; MESFETs; Numerical simulation; Performance analysis; Poisson equations; Spontaneous emission; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.22467

Filename

22467