• DocumentCode
    925710
  • Title

    New method for producing ideal metal-semiconductor ohmic contacts

  • Author

    Sebestyen, T. ; Hartnagel, H. ; Herron, L.H.

  • Author_Institution
    University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Merz Laboratories, Newcastle upon Tyne, UK
  • Volume
    10
  • Issue
    18
  • fYear
    1974
  • Firstpage
    372
  • Lastpage
    373
  • Abstract
    A new understanding of ohmic-contact alloying in terms of liquid-epitaxy processes has led to improved contact fabrication by using a slow alloying cycle with an As overpressure chamber. A conveniently wide range of As pressures is possible when Ga is deposited together with the other metals.
  • Keywords
    ohmic contacts; semiconductor-metal boundaries; As pressures; Ga; liquid epitaxy process; ohmic contacts; semiconductor metal boundaries; slow alloying cycle;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740295
  • Filename
    4236460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925710