3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

Author

Sumpf, Bernd ; Zorn, Martin ; Staske, Ralf ; Fricke, Jörg ; Ressel, Peter ; Ginolas, Arnim ; Paschke, Katrin ; Erbert, Götz ; Weyers, Markus ; Tränkle, Günther

Author_Institution

Ferdinand-Braun-Inst. fur Hopchstfrequenztechnik, Berlin

Volume

13

Issue

5

fYear

2007

Firstpage

1188

Lastpage

1193

Abstract

Highly efficient 650-nm high-power broad-area laser diodes and laser bars with single quantum well InGaP quantum wells embedded in AlGaInP waveguide layers, and n-AlInP and p-AlGaAs cladding layers are presented. Broad-area lasers that are 100-mum wide reach output powers of 3 W and conversion efficiencies of about 40% at 15degC. For 5-mm wide laser bars (filling factor of 20%), maximum output powers of 12 W in continuous-wave (CW) operation and 55 W in quasi-CW mode were obtained. Reliable operation of 5000 h at 800 mW for single emitters and at 5 W for laser bars will be reported.

Keywords

III-V semiconductors; aluminium compounds; claddings; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; quantum well lasers; AlGaAs; AlGaInP; AlGaInP waveguide layers; AlInP; InGaP; InGaP quantum wells; high-power broad-area laser diodes; laser bars; n-AlInP cladding layers; p-AlGaAs cladding layers; power 12 W; power 3 W; power 5 W; power 55 W; power 800 mW; quasi-CW mode; size 100 mum; size 5 mm; temperature 15 C; time 5000 h; wavelength 650 nm; Bars; Diode lasers; Laser modes; Lasers and electrooptics; Power generation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Waveguide lasers; Continuous-wave (CW) lasers; laser reliability; red lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2007.903372

Filename

4346522