• DocumentCode
    926748
  • Title

    Temperature dependence of the velocity/field characteristic of electrons in InP

  • Author

    Fawcett, W. ; Hill, G.

  • Author_Institution
    Royal Radar Establishment, Great Malvern, UK
  • Volume
    11
  • Issue
    4
  • fYear
    1975
  • Firstpage
    80
  • Lastpage
    81
  • Abstract
    Previous calculations of the velocity/field characterisitcs of electrons in indium phosphide at room temperature have been extended to cover the temperature range 200¿500 K. Preliminary results for the diffusion coefficients are presented.
  • Keywords
    III-V semiconductors; electrical conductivity of solid semiconductors and insulators; high field effects; indium compounds; InP; diffusion coefficients; electrons; high field effects; temperature dependence; velocity/field characteristic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750060
  • Filename
    4236569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926748