DocumentCode
926898
Title
Aftereffects in IMPATT oscillators with transient ionizing radiation
Author
Borrego, J.M. ; Gutmann, R.J. ; Cottrell, P.E. ; Ghandhi, S.K.
Author_Institution
Rensselaer Polytechnic Institute, Troy, N. Y.
Volume
61
Issue
5
fYear
1973
fDate
5/1/1973 12:00:00 AM
Firstpage
675
Lastpage
676
Abstract
Two types of aftereffects were observed in testing IMPATT diodes under ionizing radiation. The first type can be characterized by a 10-25-percent decrease in power and a 5-20-MHz change in oscillation frequency after the radiation pulse. The second type is characterized by a large change in oscillator performance (3-dB decrease in power and 1-GHz change in frequency) or irreversible diode failure, and occurred with two GaAs Schottky diodes. A strong cavity-RF load dependence has been demonstrated for the latter type of aftereffect.
Keywords
Force measurement; Gallium arsenide; Ionizing radiation; Leakage current; Oscillators; Radio frequency; Schottky diodes; Semiconductor diodes; Silicon; Testing;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1973.9134
Filename
1451064
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