Realization of an n-channel GaAs/AlGaAs bistable transistor (BISFET)

Author

Ojha, J.J. ; Simmons, John G. ; Mand, R.S. ; SpringThorpe, Anthony J.

Author_Institution

Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada

Volume

14

Issue

8

fYear

1993

Firstpage

385

Lastpage

387

Abstract

The first realization of a novel heterostructure device, the bistable field-effect transistor (BISFET), is reported. The device uses an n-channel GaAs/AlGaAs inversion channel structure. It contains a positive feedback loop between the gate and source terminals, which is activated above a gate voltage of 1.7 V. This leads to abrupt transitions between high- and low-current states as the drain voltage is changed, with a switching ratio of 1.5. The transitions are accompanied by sharp changes in gate current as the feedback loop turns on and off. These transitions, referred to as switch up and switch down, form a large hysteresis loop in the drain characteristics. Hysteresis as large as 3.7 V is observed, making the device strongly bistable.<>

Keywords

III-V semiconductors; aluminium compounds; feedback; field effect transistors; gallium arsenide; hysteresis; negative resistance; semiconductor switches; 1.7 V; BISFET; GaAs-AlGaAs; S-type NDR; bistable switch; bistable transistor; drain characteristics; drain voltage; gate current; heterostructure device; hysteresis loop; inversion channel structure; n-channel; positive feedback loop; switching ratio; FETs; Feedback loop; Gallium arsenide; Heterojunctions; Hysteresis; Optical bistability; Optical devices; Optical feedback; Switches; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225587

Filename

225587