DocumentCode
927413
Title
Pulsed measurement of BARITT-diode impedance against current and temperature
Author
Roer, Th G Van De ; Kwaspen, J.J.M.
Author_Institution
Eindhoven University of Technology, Department of Electrical Engineering, Eindhoven, Netherlands
Volume
11
Issue
8
fYear
1975
Firstpage
165
Lastpage
166
Abstract
The small-signal impedances of M¿n¿p and p¿n¿p BARITT diodes have been measured as a function of bias current and diode temperature. A bridge method, developed by Van Iperen and Tjassens, has been adapted so that measurements can be made during short current pulses. In this way, the diode temperature can be kept close to the heatsink temperature. The method is equally suited for other microwave diodes, e.g. IMPATT and Gunn diodes.
Keywords
avalanche diodes; electrical impedance measurement; solid-state microwave devices; transit time devices; Gunn diodes; IMPATT; M-n-p; bias current; bridge method; heatsink temperature; impedance; microwave diodes; p-n-p BARITT diode; pulsed measurement; temperature;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750126
Filename
4236639
Link To Document