• DocumentCode
    927618
  • Title

    Effects of field-dependent carrier mobility on low-frequency noise in silicon JFET´s

  • Author

    Haslett, J.W. ; Kendall, E.J.M.

  • Author_Institution
    University of Calgary, Alta., Canada
  • Volume
    61
  • Issue
    7
  • fYear
    1973
  • fDate
    7/1/1973 12:00:00 AM
  • Firstpage
    1050
  • Lastpage
    1051
  • Abstract
    The theory of low-frequency generation noise in bulk field-effect devices is derived to include the effects of field-dependent carrier mobility in the channel. The results indicate reduced bias dependence of the noise prior to drain current saturation when compared to the low-field case, and predict an overall level decrease with decreasing temperature.
  • Keywords
    Circuit noise; Electrical capacitance tomography; FETs; Low-frequency noise; Noise generators; Noise level; Noise reduction; Silicon; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9203
  • Filename
    1451133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=927618