DocumentCode
927642
Title
Tunnel transistor
Author
Kisaki, Hitoshi
Author_Institution
Fujitsu Limited, Kobe, Japan
Volume
61
Issue
7
fYear
1973
fDate
7/1/1973 12:00:00 AM
Firstpage
1053
Lastpage
1054
Abstract
A tunnel transistor which can be easily obtained by the conventional silicon planar technology will be proposed. It promises fine control of electrical characteristics and high yield. The yield per one wafer in the wafer checking has amounted to 100 percent.
Keywords
Convolvers; Electric variables; Electrodes; Electron emission; Insulation; Metal-insulator structures; Semiconductor devices; Silicon; Tunneling; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1973.9205
Filename
1451135
Link To Document