• DocumentCode
    928192
  • Title

    Complex distribution effects of thin component ohmic-contact layers on GaAs

  • Author

    Weiss, B.L. ; Hartnagel, H.L.

  • Author_Institution
    University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Merz Laboratories, Newcastle upon Tyne, UK
  • Volume
    11
  • Issue
    12
  • fYear
    1975
  • Firstpage
    263
  • Lastpage
    264
  • Abstract
    A microprobe analysis of cleaved edges of GaAs samples containing the cross-section of ohmic contacts has shown that near the surface these contacts contain GaxIn1¿xAs, which is probably caused by its precipitation to single-crystal nucleation Sites produced at the surface of the metallisation.
  • Keywords
    III-V semiconductors; gallium arsenide; ohmic contacts; GaAs; GaxIn1-xAs; metallisation; microprobe analysis; precipitation; thin component ohmic contact layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750199
  • Filename
    4236716
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928192