DocumentCode
928425
Title
Modeling H+-sensitive FETs with SPICE
Author
Grattarola, Massimo ; Massobrio, Giuseppe ; Martinoia, Sergio
Author_Institution
Dept. of Biophys. & Electron. Eng., Genova Univ., Italy
Volume
39
Issue
4
fYear
1992
fDate
4/1/1992 12:00:00 AM
Firstpage
813
Lastpage
819
Abstract
A generalized physical model including two kinds of binding sites is presented on H+-sensitive ISFET devices. The model results in a set of equations which is introduced into a modified version of the electronic circuit simulation program SPICE. In this way, the effects induced on the device performances by varying several physico-chemical parameters are analyzed. The slope of Vout versus pH curves is predicted for SiO2-, Al2O3-, and Si 3N4-gate ISFETs. The model is then used to predict the behavior of a hypothetical, partially pH-insensitive (REFET) structure. Finally, the model is utilized to fit the slow response of the Al2O3-gate ISFET to a pH stop
Keywords
electric sensing devices; electronic engineering computing; insulated gate field effect transistors; pH measurement; semiconductor device models; H+ sensitivity; ISFET devices; REFET structure; SPICE; Si-Al2O3; Si-Si3N4; Si-SiO2; binding sites; electronic circuit simulation program; output voltage pH curves; physical model; slow response; Chemical analysis; Chemical technology; Circuit simulation; Electronic circuits; Equations; FETs; Insulation; Predictive models; SPICE; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.127470
Filename
127470
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