• DocumentCode
    929020
  • Title

    A graphical method to determine the generation parameters from pulsed MIS capacitors

  • Author

    Kang, Jung S. ; Kim, Sang U. ; Schroder, Dieter K.

  • Author_Institution
    Intel Corp., Chandler, AZ, USA
  • Volume
    39
  • Issue
    4
  • fYear
    1992
  • fDate
    4/1/1992 12:00:00 AM
  • Firstpage
    1009
  • Lastpage
    1011
  • Abstract
    A graphical method for the determination of semiconductor generation parameters has been developed. This technique is based on two graphs which are plotted from a general expression of capacitance-time ( C-t) behavior and a measured C-t curve of a pulsed metal-insulator-semiconductor capacitor (MIS-C). The generation lifetime and the surface generation velocity obtained by this method agree very well with those obtained by the Zerbst technique
  • Keywords
    capacitance; carrier lifetime; metal-insulator-semiconductor devices; Zerbst technique; capacitance time behaviour; generation lifetime; generation parameters; graphical method; metal-insulator-semiconductor; pulsed MIS capacitors; semiconductor; surface generation velocity; Capacitance; Capacitors; Character generation; Genetic expression; Insulation; Pulse generation; Pulse measurements; Semiconductor devices; Solid state circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.127496
  • Filename
    127496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=929020