DocumentCode
929088
Title
Comprehensive dynamic analysis of wirebonding on Cu/low-K wafers
Author
Yeh, Chang-Lin ; Lai, Yi-Shao
Author_Institution
Stress-Reliability Lab., Adv. Semicond. Eng. Inc., Kaohsiung, Taiwan
Volume
29
Issue
2
fYear
2006
fDate
5/1/2006 12:00:00 AM
Firstpage
264
Lastpage
270
Abstract
Comprehensive dynamic analysis is performed in this paper to simulate wirebonding on Cu/low-K wafers, which involves both the impact and the ultrasonic vibration stages. After the impact stage, the contact region between the pad and the gold ball is welded to allow subsequent ultrasonic vibrations to take place. Parametric studies are carried out to investigate structural responses of the Cu/low-K layer due to variation of the moduli of Cu/low-K components.
Keywords
copper; gold; impact (mechanical); lead bonding; vibrations; wafer bonding; Au; Cu; Cu/low-k layer; Cu/low-k wafers; dynamic analysis; gold ball; impact stage; structural responses; ultrasonic vibration; wire bonding; Analytical models; Copper; Gold; Integrated circuit interconnections; Numerical analysis; Parametric study; Performance analysis; Semiconductor device modeling; Transient analysis; Vibrations; Cu/low-K; explicit finite-element analysis; impact; ultrasonic vibration; wirebonding;
fLanguage
English
Journal_Title
Advanced Packaging, IEEE Transactions on
Publisher
ieee
ISSN
1521-3323
Type
jour
DOI
10.1109/TADVP.2006.871193
Filename
1629168
Link To Document