• DocumentCode
    929685
  • Title

    p+-n-p+ BARITT-diode design

  • Author

    Stewart, A.C.

  • Author_Institution
    Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
  • Volume
    11
  • Issue
    19
  • fYear
    1975
  • Firstpage
    460
  • Lastpage
    461
  • Abstract
    p+-n-p+ BARITT diodes have been designed to give maximum output power at X band frequencies. Computed output power against frequency shows good agreement with measured powers. The dominant effect of the maximum n region electric field on output power is demonstrated.
  • Keywords
    semiconductor diodes; solid-state microwave devices; transit time devices; X-band frequencies; output power; p+-n-p+ BARITT diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750353
  • Filename
    4236878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=929685