• DocumentCode
    929963
  • Title

    C-band complementary TRAPATT diodes

  • Author

    Ying, R.S. ; Fong, T.T.

  • Author_Institution
    Hughes Research Laboratories, Torrance, Calif.
  • Volume
    62
  • Issue
    2
  • fYear
    1974
  • Firstpage
    287
  • Lastpage
    288
  • Abstract
    Complementary n+-p junction TRAPATT diodes have been fabricated for C-band operation. Peak power output as high as 27 W with 42.5-percent efficiency has been achieved at 7.2 GHz.
  • Keywords
    Bandwidth; Charge carrier processes; Electron traps; Fabrication; Frequency response; H infinity control; Ionization; Semiconductor diodes; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9422
  • Filename
    1451352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=929963