Empirical model of MOSFET breakdown voltages

Author

Mitros, Jozef C.

Author_Institution

National Semiconductor Co., Austin, TX, USA

Volume

12

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

511

Lastpage

515

Abstract

An additive model of drain-to-source current of a MOS transistor in the breakdown region is presented for the circuit-simulation SPICE program. An additional drain-to-source current is described by mixed quadratic and exponential formulas. Continuity of current and its first derivatives is assured. This guarantees a convergence of the Newton-Raphson algorithm used in SPICE. Variation of the drain-to-source breakdown voltage at V_gs=0 and of the injection-induced breakdown voltage at V_gs>V _th with the gate-to-source voltage and the effective channel length is taken into account. Most of the model parameters have physical meanings and they are easily measurable

Keywords

SPICE; electric breakdown of solids; insulated gate field effect transistors; semiconductor device models; MOS transistor; MOSFET; Newton-Raphson algorithm; additive model; breakdown voltages; circuit-simulation SPICE program; convergence; drain-to-source current; effective channel length; injection-induced breakdown; model parameters; Additives; Bipolar transistors; Breakdown voltage; Circuit simulation; Convergence; Electric breakdown; Integrated circuit measurements; MOSFET circuits; SPICE; Tunneling;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.229734

Filename

229734