DocumentCode
930044
Title
Hydrodynamic Simulations of Unitraveling-Carrier Photodiodes
Author
Rahman, S. M Mahmudur ; Hjelmgren, Hans ; Vukusic, Josip ; Stake, Jan ; Andrekson, Peter A. ; Zirath, Herbert
Author_Institution
Chalmers Univ. of Technol., Goteborg
Volume
43
Issue
11
fYear
2007
Firstpage
1088
Lastpage
1094
Abstract
We present simulated results of a unitraveling-carrier photodiode (UTC-PD) using the hydrodynamic carrier transportation model. A maximum responsivity of 0.25 A/W and a small-signal 3-dB bandwidth of 52 GHz were obtained for a 220-nm-thick InGaAs absorption layer. The physical properties of the UTC-PD have been investigated at different optical injection levels. Modulation of the energy-band profile due to the space charge effect has been observed at high injection level, and an electron velocity overshoot of 3 x 107 cm/s has been found to effectively delay the onset of space charge effects. Comparisons with reported simulated results using the drift-diffusion model as well as reported experimental results are presented. The results suggest the necessity of using the hydrodynamic transport equations to accurately model the UTC-PD. In addition, it has been corroborated that the photoresponse of the UTC-PD could be improved by incorporating a graded doping profile in the absorption layer.
Keywords
III-V semiconductors; gallium arsenide; hydrodynamics; indium compounds; photodiodes; semiconductor device models; semiconductor heterojunctions; space charge; InGaAs; absorption layer; bandwidth 52 GHz; drift-diffusion model; energy-band profile; graded doping profile; hydrodynamic carrier transportation model; hydrodynamic simulation; hydrodynamic transport equations; photoresponse; semiconductor device modeling; semiconductor heterojunctions; size 220 nm; space charge effect; unitraveling-carrier photodiodes; Absorption; Bandwidth; Electron optics; Hydrodynamics; Indium gallium arsenide; Optical modulation; Photodiodes; Road transportation; Semiconductor process modeling; Space charge; Hot carriers; photodiodes (PDs); semiconductor device modeling; semiconductor heterojunctions;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2007.905885
Filename
4349176
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