DocumentCode
930319
Title
Electron drift velocity model for simulation of InGaAs JFETs
Author
Cordero, N. ; McCarthy, K. ; Lyden, C. ; Kelly, W.M.
Author_Institution
Nat. Microelectron. Res. Centre, Univ. College Cork, Ireland
Volume
140
Issue
4
fYear
1993
fDate
8/1/1993 12:00:00 AM
Firstpage
261
Lastpage
263
Abstract
Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id /Vds behaviour of these devices. From comparison with experimental results, the authors conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs
Keywords
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor device models; simulation; I/V behaviour; InGaAs; JFETs; electron drift velocity field characteristic; model; two-dimensional numerical simulator;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
229776
Link To Document