• DocumentCode
    930440
  • Title

    Low threshold room temperature pulsed and -57 degrees C CW operations of 1.3 mu m GaInAsP/InP circular planar buried heterostructure surface-emitting lasers

  • Author

    Baba, Toshihiko ; Suzuki, Katsumasa ; Yogo, Yukiaki ; Iga, Kenichi ; Koyama, Fumio

  • Author_Institution
    Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    5
  • Issue
    7
  • fYear
    1993
  • fDate
    7/1/1993 12:00:00 AM
  • Firstpage
    744
  • Lastpage
    746
  • Abstract
    Room temperature pulsed lasing operation of a 1.3- mu m GaInAsP/InP vertical-cavity surface-emitting laser has been achieved by using an effective carrier confinement of circular planar buried heterostructure (CPBH) and high reflectivity SiO/sub 2//Si dielectric multilayer mirrors. The threshold current for a device having a nearly 12- mu m-diameter active region was 34 mA at 24 degrees C under pulsed operation. The optimized window cap structure reduces the series resistance to 6 approximately 15 Omega . Continuous wave lasing was also obtained up to -57 degrees C, and the threshold below -61 degrees C was still lower than 22 mA.<>
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; optical films; reflectivity; semiconductor lasers; silicon; silicon compounds; -57 degC; 1.3 micron; 12 micron; 15 ohm; 24 degC; 34 mA; CW operations; GaInAsP-InP; IR; SiO/sub 2/-Si; active region; circular planar buried heterostructure surface-emitting lasers; dielectric multilayer mirrors; effective carrier confinement; high reflectivity; low threshold; optimized window cap structure; pulsed lasing operation; pulsed operation; room temperature; semiconductors; series resistance; vertical-cavity; Carrier confinement; Dielectrics; Indium phosphide; Mirrors; Nonhomogeneous media; Optical pulses; Reflectivity; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.229792
  • Filename
    229792