• DocumentCode
    930563
  • Title

    Outmigration of gallium from Au-GaAs interfaces

  • Author

    Madams, C.J. ; Morgan, D.V. ; Howes, M.J.

  • Author_Institution
    University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
  • Volume
    11
  • Issue
    24
  • fYear
    1975
  • Firstpage
    574
  • Lastpage
    575
  • Abstract
    Experimental evidence is presented which suggests that the degradation of Au-GaAs Schottky-barriers after annealing is due to the outmigration of gallium into the gold, resulting in the formation of an n+ region beneath the contact.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; diffusion in solids; gallium arsenide; gold; semiconductor-metal boundaries; AuGaAs interfaces; Ga; Schottky barriers; annealing; n+ region; outmigration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750440
  • Filename
    4236969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930563