DocumentCode
931993
Title
Broad-Band Characteristics of EHF IMPATT Diodes
Author
Holway, Lowell H., Jr. ; Chu, Shiou Lung
Volume
30
Issue
11
fYear
1982
Firstpage
1933
Lastpage
1939
Abstract
Measurements have been made of the oscillator characteristics when a GaAs EHF double-drift IMPATT diode designed for a frequency of 35 GHz is operated over an extended frequency range from 33-50 GHz. The diode which was designed for 35 GHz has a broad-band capability which allows it to produce 2.15 W at 44.1 GHz. An analytic model is shown to predict accurately the observed results. The model indicates that the upper limit in frequency can be increased by reducing the diode area or the series resistance as well as by reducing the length of the drift region.
Keywords
Circuit testing; Diodes; Electrical engineering; Gallium arsenide; Heat sinks; Laboratories; Millimeter wave communication; Power generation; Radio frequency; Telegraphy;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1982.1131346
Filename
1131346
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