Characteristics of a new BBOS with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure

Two-terminal switching performances are observed in a new AlGaAs-GaAs-InAlGaP npn bulk-barrier optoelectronic switch (BBOS) with an AlGaAs-δ(n⁺)-GaAs-InAlGaP collector structure. The device shows that the switching action takes place from a low-current state to a high-current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage V_s, holding voltage V_H, and holding current I_H, and decreases the switching current I_S, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160°C. This high-temperature performance provides the studied device with potential high-temperature applications.