Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT´s

Author

Hafizi, Madjid ; Stanchina, William E. ; Metzger, Robert A. ; Macdonald, Perry A. ; Williams, Freddie, Jr.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

40

Issue

9

fYear

1993

fDate

9/1/1993 12:00:00 AM

Firstpage

1583

Lastpage

1588

Abstract

Device characteristics of compositionally graded AlInAs/GaInAs heterojunction bipolar transistors (HBTs) measured and analyzed from cryogenic temperatures up to 250°C are discussed. Excellent stability in DC and RF performance is observed at elevated temperatures, which is desirable for high-speed and high-density integrated circuit applications. DC current gain exhibits about 10% variation over the entire measured temperature range. F_T and f _max at 125°C decreased by approximately 10% from their room-temperature values while improving steadily when the device was cooled down to near-liquid-helium temperature, the common-emitter breakdown voltage is 8.0 V at room temperature and reduces to 7.5 V at 125°C. Likewise, the collector-base breakdown voltage and the base-emitter breakdown voltage reduce by about 0.5 V over the same temperature range. The breakdown voltages increase significantly at cryogenic temperatures. The low turn-on voltage and excellent low-temperature characteristics make the AlInAs/GaInAs HBT attractive for cryogenic applications

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; 125 degC; 7.5 V; 8.0 V; AlInAs-GaInAs; DC characteristics; DC current gain; HBT´s; RF characteristics; base-emitter breakdown voltage; collector-base breakdown voltage; common-emitter breakdown voltage; compositionally graded; cryogenic applications; cryogenic temperatures; device characteristics; elevated temperatures; heterojunction bipolar transistors; high-density integrated circuit applications; high-speed; low-temperature characteristics; stability; turn-on voltage; Application specific integrated circuits; Circuit stability; Cryogenics; Gain measurement; Heterojunction bipolar transistors; Integrated circuit measurements; Radio frequency; Temperature dependence; Temperature distribution; Temperature measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.231562

Filename

231562