DocumentCode
933359
Title
Temperature Stabilization of GaAs MESFET Oscillators Using Dielectric Resonators
Author
Tsironis, Christos ; Pauker, Vlad
Volume
31
Issue
3
fYear
1983
Firstpage
312
Lastpage
314
Abstract
A simple model of the temperature stabilization of dielectric resonator FET oscillators (DRO´s) is presented. Deduced from the oscillation condition, the model furnishes relations for oscillation power and frequency stability with temperature. A stack resonator with an appropriate linear resonance frequency/temperature characteristic has been developed and used to stabilize a DRO: frequency stability of +- 120 kHz over - 20°C to 80°C ( delta=+- 0.1 ppm/K) at 11.5 GHz has been achieved.
Keywords
Dielectrics; Electromagnetic waveguides; FETs; Frequency; Gallium arsenide; MESFETs; Oscillators; Reflection; Stability; Temperature;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1983.1131484
Filename
1131484
Link To Document