DocumentCode
933937
Title
Effect of controlled asymmetry on the switching characteristics of ring-based MRAM design
Author
Mani, Anand Subra ; Geerpuram, Dwarakanath ; Baskaran, Vidhya Shankar ; Metlushko, Vitali
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Chicago, IL, USA
Volume
5
Issue
3
fYear
2006
fDate
5/1/2006 12:00:00 AM
Firstpage
249
Lastpage
254
Abstract
It was suggested that the shape effects are responsible for the vortex formation and chirality in circular ring elements. We found that the introduction of well-controlled asymmetry into permalloy rings provides precise control of the switching mechanism and leads to improved switching characteristics.
Keywords
Permalloy; magnetic storage; magnetic switching; random-access storage; NiFe; chirality; controlled asymmetry effect; magnetic anisotropy; magnetic memories; permalloy rings; ring-based MRAM design; switching mechanism; vortex formation; Magnetic anisotropy; Magnetic domain walls; Magnetic switching; Magnetization; Magnetosphere; Perpendicular magnetic anisotropy; Polarization; Random access memory; Remanence; Shape; Magnetic anisotropy; magnetic memories; magnetization processes; magnetization reversal;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2006.874041
Filename
1632143
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