DocumentCode
934899
Title
Decomposition of fluorocarbon gaseous contaminants by surface discharge-induced plasma chemical processing
Author
Oda, Tetsuji ; Takahashi, Tadashi ; Nakano, Hiroshi ; Masuda, Senichi
Author_Institution
Dept. of Electr. Eng., Tokyo Univ., Japan
Volume
29
Issue
4
fYear
1993
Firstpage
787
Lastpage
792
Abstract
The decomposition performance of surface discharge induced plasma chemical processing (SPCP) with a cylindrical ceramic-based reactor for chlorofluorocarbon gases was measured in atmospheric air, pure oxygen gas, or pure nitrogen gas. In the case of decomposition test for 1000 p.p.m. CFC-22 in air, a maximum decomposition rate of about 90% was recorded. In the case of the decomposition test for 100 p.p.m. CFC-113, more than 99% fluorocarbon could be removed. The decomposition mechanism of fluorocarbon is not yet known exactly but is assumed to be due to the effect of the surface discharge plasma near the discharge electrode. The decomposition rate for fluorocarbon in nitrogen gas was the largest among three gases (air, nitrogen, and oxygen), indicating the strong activity of the nitrogen radicals. A large ceramic reactor was also tested, and the decomposition performance was found to be proportional to the real electric power consumption under best conditions. The reaction products after the SPCP are not yet identified, but phosgene and its derivatives have not yet been found
Keywords
electrodes; electrostatic devices; high-frequency discharges; plasma applications; plasma devices; safety; surface discharges; CFC; CFC-113; CFC-22; ceramic reactor; chlorofluorocarbon gases; decomposition performance; discharge electrode; electrostatic devices; fluorocarbon gaseous contaminants; power consumption; radicals; reaction products; surface discharge-induced plasma chemical processing; Chemical processes; Gases; Inductors; Nitrogen; Plasma chemistry; Plasma materials processing; Plasma measurements; Surface contamination; Surface discharges; Testing;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/28.231995
Filename
231995
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