DocumentCode
936047
Title
A reliable fifteen-percent-efficiency Silicon double-drift-region IMPATT diode
Author
Lekholm, A. ; Sellberg, F. ; Weissglas, P. ; Andersson, G.
Author_Institution
Siemens-Elema AB, Solna, Sweden
Volume
63
Issue
11
fYear
1975
Firstpage
1613
Lastpage
1615
Abstract
This letter describes the development of a medium-power high-efficiency high-reliability double-drift-region silicon IMPATT diode intended for use in telecommunication satellites at 11-13 GHz. The design is based on large-signal computer simulations. The highest efficiency obtained is 15.1 percent. A pilot reliability test has accumulated 7700 dc device hours at 270°C with no failures. During screening, 6000 RF device hours with no failures at approximately 180°C were also noted.
Keywords
Computer simulation; Digital integrated circuits; Diodes; Fabrication; Gold; Regions; Satellites; Signal design; Silicon; Solid state circuits;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1975.10012
Filename
1451941
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