• DocumentCode
    936076
  • Title

    Compound barriers in thin oxide film diodes

  • Author

    Padmanabhan, K.R. ; Sathianandan, K.

  • Author_Institution
    University of Poona, Poona, India
  • Volume
    63
  • Issue
    11
  • fYear
    1975
  • Firstpage
    1617
  • Lastpage
    1618
  • Abstract
    High-frequency reverse bias measurements are made on sandwiched evaporated oxide films of tungsten and molybdenum. The linearity of the capacitance-voltage pilot gives an indication of Schottky-type barrier. The intercept and the n values obtained from the plot are used to calculate the thickness of the space charge region. It is concluded that a compound barrier exists at the interface.
  • Keywords
    Capacitance measurement; Electrical resistance measurement; Electrodes; Linearity; Rectifiers; Schottky diodes; Semiconductor diodes; Space charge; Transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1975.10014
  • Filename
    1451943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=936076