• DocumentCode
    936105
  • Title

    Heatsinking GaAs 4--18 GHz Gunn and IMPATT devices

  • Author

    Lindstr¿¿m, C. ; Jeppsson, B.

  • Author_Institution
    Microwave Institute Foundation, Stockholm, Sweden
  • Volume
    12
  • Issue
    3
  • fYear
    1976
  • Firstpage
    66
  • Lastpage
    67
  • Abstract
    A method for heatsinking high-power GaAs Gunn and IMPATT devices for the frequency range 4--18 GHz is described. The method is suitable for large-scale fabrication of devices, with high reproducibility and high quality. Typical microwave results are presented.
  • Keywords
    Gunn devices; IMPATT devices; heat sinks; solid-state microwave devices; 4 to 18 GHz; GaAs Gunn devices; GaAs IMPATT devices; heatsinking; microwave results;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760054
  • Filename
    4239601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=936105