Gain-coupled distributed feedback semiconductor lasers with an absorptive conduction-type inverted grating

Author

Luo, Y. ; Cao, H.-L. ; Dobashi, M. ; Hosomatsu, H. ; Nakano, Y. ; Tada, K.

Author_Institution

Opt. Measure. Technol. Dev. Co. Ltd., Tokyo, Japan

Volume

4

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

692

Lastpage

695

Abstract

A gain-coupled (GC) distributed feedback (DFB) semiconductor laser with an absorptive conduction-type-inverted grating is proposed. Devices based on GaAlAs/GaAs materials are fabricated using two-step OMVPE. By inverting the conduction type of the absorptive region, threshold current is lowered by 10 mA, which is to compensate for the threshold increase due to extra absorption. In addition, nonlinear output property associated with the saturable nature of the absorption is eliminated. An ultralow chirping capability under gain switching high speed modulation and the narrow linewidth nature of this laser are experimentally studied.<>

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; optical modulation; semiconductor growth; semiconductor junction lasers; spectral line breadth; vapour phase epitaxial growth; GaAlAs-GaAs; absorptive conduction-type inverted grating; distributed feedback semiconductor lasers; gain-coupled; narrow linewidth nature; r gain switching high speed modulation; threshold current; two-step OMVPE; ultralow chirping capability; Absorption; Conducting materials; Distributed feedback devices; Gallium arsenide; Gratings; Laser feedback; Optical materials; Semiconductor lasers; Semiconductor materials; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.145240

Filename

145240