• DocumentCode
    937761
  • Title

    Criterion for the optimum punchthrough factor of gallium-arsenide IMPATT diodes

  • Author

    Blakey, P.A. ; Culshaw, Brian ; Giblin, R.A.

  • Author_Institution
    University College London, Department of Electronic & Electrical Engineering, London, UK
  • Volume
    12
  • Issue
    11
  • fYear
    1976
  • Firstpage
    284
  • Lastpage
    286
  • Abstract
    Simple theory predicts an optimum punchthrough factor of approximately 0.7 for gallium-arsenide IMPATTs. Computer-simulation results demonstrate good general agreement with the predictions of the theory.
  • Keywords
    III-V semiconductors; IMPATT diodes; gallium arsenide; solid-state microwave devices; GaAs IMPATT diode; optimum punchthrough factor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760220
  • Filename
    4239795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=937761