DocumentCode
938444
Title
Integration of GaAs m.e.s.f.e.t.s and Gunn elements in a 4 bit-gate device
Author
Hashizume, Nobuya ; Kataoka, S.
Author_Institution
Electrotechnical Laboratory, Tokyo, Japan
Volume
12
Issue
15
fYear
1976
Firstpage
370
Lastpage
372
Abstract
A GaAs m.e.s.f.e.t. and a Schottky electrode-triggered Gunn element have been integrated into a single device which operated as a negative logic inhibitor. A monolithic device of four such inhibitors, connected in cascade, was operated in a stable manner, with a signal delay per gate as small as 40 ps.
Keywords
Gunn devices; field effect transistors; logic gates; GaAs MESFET; Gunn elements; Schottky electrode triggered Gunn element; monolithic device; negative logic inhibitor; signal delay per gate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760284
Filename
4239873
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