• DocumentCode
    939196
  • Title

    Hydrogen sensitivity of palladium--thin-oxide--silicon Schottky barriers

  • Author

    Shivaraman, M.S. ; Lundstr¿¿m, I. ; Svensson, Christer ; Hammarsten, H.

  • Author_Institution
    Chalmers University of Technology, Research Laboratory of Electronics, Gothenburg, Sweden
  • Volume
    12
  • Issue
    18
  • fYear
    1976
  • Firstpage
    483
  • Lastpage
    484
  • Abstract
    It is shown that current transport through Schottky barriers formed by Pd on n-type silicon with a thin thermally grown oxide is sensitive to hydrogen in the ambient. It is shown that a transition from minority- to majority-carrier dominated current occurs with increasing hydrogen pressure.
  • Keywords
    Schottky effect; metal-insulator-semiconductor structures; tunnelling; H2 sensitivity; Pd thin oxide Si Schottky barriers; majority carriers; minority carriers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760365
  • Filename
    4240040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=939196