• DocumentCode
    939297
  • Title

    A New Nonvolatile Bistable Polymer-Nanoparticle Memory Device

  • Author

    Lin, Heng-Tien ; Pei, Zingway ; Chen, Jun-Rong ; Hwang, Gue-Wuu ; Fan, Jui-Fen ; Chan, Yi-Jen

  • Author_Institution
    Ind. Technol. Res. Inst. (ITRI), Hsinchu
  • Volume
    28
  • Issue
    11
  • fYear
    2007
  • Firstpage
    951
  • Lastpage
    953
  • Abstract
    In this letter, we demonstrate a new organic bistable nonvolatile memory device that is adopting polymer-chain-stabilized gold (Au) nanoparticles in a host polymer as a memory active layer. In this letter, the Au nanoparticles are well dispersed in the host polymer so as to enhance stability of memory devices. Current-voltage characteristics show that the device switches from an initial low-conductivity state to a high-conductivity state upon applying an external electric field at room temperature. This memory can be switched ON and OFF for over 150 times without an apparent performance degradation. In addition, the memory state can retain for over 36 000 s in air. This memory device is thus considered to be a suitable candidate for flexible electronics applications.
  • Keywords
    flexible electronics; gold; nanoparticles; random-access storage; Au - Element; current voltage characteristics; external electric field; flexible electronics; gold nanoparticles; nonvolatile bistable memory device; polymer chain stabilized; polymer-nanoparticle memory device; temperature 293 K to 298 K; Bistable; endurance; nonvolatile; retention time;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.903944
  • Filename
    4357974