A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser

Author

Wiemer, Michael W. ; Aldaz, Rafael I. ; Miller, David A B ; Harris, James S.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA, USA

Volume

17

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1366

Lastpage

1368

Abstract

We present a fully monolithic long vertical-cavity surface-emitting laser operating in the fundamental TEM₀₀ transverse mode with output powers up to 7.8 mW. The lasing wavelength is 980 nm and the threshold is 9.1 mA. Pump currents from threshold to rollover produce an output beam with an M²<1.08. The laser consists of an InGaAs-GaAs-AlGaAs gain region/semiconductor mirror bonded to a 0.5-mm-thick glass substrate with an integrated curved mirror.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; laser mirrors; laser modes; monolithic integrated circuits; optical pumping; semiconductor lasers; surface emitting lasers; 0.5 mm; 7.8 mW; 9.1 mA; 980 nm; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs gain region; SiO₂; fundamental TEM₀₀ mode; glass substrate; integrated curved mirror; monolithically integrated laser; semiconductor mirror; single transverse mode laser; vertical-cavity surface-emitting laser; Laser beams; Laser excitation; Laser modes; Mirrors; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Bonding; laser modes; semiconductor laser arrays; semiconductor lasers; surface-emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.848277

Filename

1453612