21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs)

Author

Ohnakado, Takahiro ; Yamakawa, Satoshi ; Murakami, Takaaki ; Furukawa, Akihiko ; Taniguchi, Eiji ; Ueda, Hiro-omi ; Suematsu, Noriharu ; Oomori, Tatsuo

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan

Volume

39

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

577

Lastpage

584

Abstract

This paper reports a 21.5-dBm power-handling 5-GHz transmit/receive CMOS switch utilizing the depletion-layer-extended transistor (DET), which possesses high effective substrate resistance and enables the voltage division effect of the stacked transistor configuration to work in the CMOS switch. Furthermore, low insertion losses of 0.95 and 1.44 dB are accomplished at 5 GHz in the transmit and receive modes, respectively, with the benefit of the insertion-loss improvement effects in the DET. At the same time, high isolations of more than 22 dB were obtained at 5 GHz in the transmit and receive modes with the adoption of the shunt/series type circuit.

Keywords

CMOS integrated circuits; field effect MMIC; switching circuits; transceivers; 0.95 dB; 1.44 dB; 5 GHz; DET; depletion-layer-extended transistors; effective substrate resistance; insertion loss; insertion-loss improvement; power-handling transmit-receive CMOS switch; series type circuit; shunt type circuit; stacked transistor configuration; voltage division effect; FETs; Gallium arsenide; Insertion loss; MOSFETs; Microwave devices; Propagation losses; Radio frequency; Switches; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.825231

Filename

1278575