DocumentCode
941718
Title
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers
Author
Curtice, Walter R. ; Ettenberg, M.
Volume
33
Issue
12
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
1383
Lastpage
1394
Abstract
A nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data. The harmonic-balance technique is used to develop the FET RF load-pull characteristics in an amplifier configuration under large-signal operation. Computed and experimental load-pull results show good agreement.
Keywords
Circuits; Gallium arsenide; Microwave FETs; Microwave devices; Microwave technology; Microwave theory and techniques; Power amplifiers; Radio frequency; Time domain analysis; Transient analysis;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1985.1133229
Filename
1133229
Link To Document