Investigation of guardring-free planar AlInAs avalanche photodiodes

Author

Yagyu, Eiji ; Ishimura, Eitaro ; Nakaji, Masaharu ; Aoyagi, Toshitaka ; Yoshiara, Kiichi ; Tokuda, Yasunori

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo

Volume

18

Issue

11

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1264

Lastpage

1266

Abstract

We analyze the operation principle and the characteristics of a guardring-free planar AlInAs avalanche photodiode (APD) by computational simulation and experimental results. The simple planar structure is based on a novel epitaxy-junction diode concept and its practical performance for 10-Gb/s optical receivers was successfully demonstrated. Electric field simulations clarified how edge multiplication, which is an inherent problem in APDs, is suppressed in the guardring-free structure. The experimental results, which are current-voltage, capacitance-voltage, and wide-range line scans of responsivity, support the simulation results, and the simulation explains the peculiar characteristics of the experimental results. The computational and the experimental analysis are consistent with one another

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; characteristics measurement; indium compounds; optical receivers; semiconductor device measurement; APD; edge multiplication; epitaxy-junction diode; optical receiver; planar AlInAs avalanche photodiode; responsivity; Absorption; Avalanche photodiodes; Computational modeling; Diodes; Indium phosphide; Optical fiber communication; Optical receivers; P-n junctions; Substrates; Zinc; Avalanche photodiodes (APDs); electric fields; optical fiber communication; optical receivers; simulation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.875523

Filename

1634564