• DocumentCode
    943458
  • Title

    Output conductance of bipolar transistors with large neutral-base recombination current

  • Author

    McGregor, Joel M. ; Roulston, David J. ; Noël, J.P. ; Houghton, D.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • Volume
    39
  • Issue
    11
  • fYear
    1992
  • fDate
    11/1/1992 12:00:00 AM
  • Firstpage
    2569
  • Lastpage
    2575
  • Abstract
    Neutral base recombination current, which is negligible in most modern bipolar transistors, can affect the common-emitter output conductance quite dramatically if it dominates other sources of base current. Mathematical theory for this phenomenon is developed, applied to some simplified special cases, and compared with numerical simulation. The large output conductance of some real Si/Si1-xGex DHBTs is seen to be the result of a large neutral base recombination current
  • Keywords
    Ge-Si alloys; electron-hole recombination; heterojunction bipolar transistors; semiconductor device models; DHBTs; Si-Si1-xGex; bipolar transistors; common-emitter output conductance; neutral-base recombination current; numerical simulation; Bipolar transistors; Capacitance; Councils; Current density; Electrons; Laboratories; Numerical simulation; Radiative recombination; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.163465
  • Filename
    163465
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=943458