• DocumentCode
    944539
  • Title

    Some effects of wave propagation in the gate of a microwave m.e.s.f.e.t.

  • Author

    Ladbrooke, P.H.

  • Author_Institution
    University of New South Wales, Department of Solid-State Electronics, Kensington, Australia
  • Volume
    14
  • Issue
    1
  • fYear
    1978
  • Firstpage
    21
  • Lastpage
    22
  • Abstract
    In microwave field-effect transistors there is a progressive phase delay as a signal propagates along the gate, with a corresponding delay in channel modulation across the width of the transistor. It is shown that this leads to a phase lag in gm while the modulus of gm is comparatively unaffected.
  • Keywords
    Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; MESFET; channel modulation; gate; microwave field effect transistor; phase delay; phase lag; wave propagation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780015
  • Filename
    4240725