DocumentCode
944539
Title
Some effects of wave propagation in the gate of a microwave m.e.s.f.e.t.
Author
Ladbrooke, P.H.
Author_Institution
University of New South Wales, Department of Solid-State Electronics, Kensington, Australia
Volume
14
Issue
1
fYear
1978
Firstpage
21
Lastpage
22
Abstract
In microwave field-effect transistors there is a progressive phase delay as a signal propagates along the gate, with a corresponding delay in channel modulation across the width of the transistor. It is shown that this leads to a phase lag in gm while the modulus of gm is comparatively unaffected.
Keywords
Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; MESFET; channel modulation; gate; microwave field effect transistor; phase delay; phase lag; wave propagation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780015
Filename
4240725
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