• DocumentCode
    945116
  • Title

    Switching conduction in ion-irradiated layers in GaAs

  • Author

    Houghton, A.J.N.

  • Author_Institution
    University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK
  • Volume
    14
  • Issue
    4
  • fYear
    1978
  • Firstpage
    102
  • Lastpage
    103
  • Abstract
    Experiments have been performed to investigate whether switching phenomena are observable in ion-irradiated GaAs. It is found that the V/I characteristics of H2+-and N+-irradiated layers show both negative resistance and switching from a high resistance to a low resistance state. Ion irradiation may thus be a useful method of fabricating switching devices.
  • Keywords
    III-V semiconductors; electrical conductivity transitions; gallium arsenide; ion beam effects; ion implantation; negative resistance effects; semiconductor switches; GaAs; V/I characteristics; electrical conductivity transitions; ion beam effects; ion irradiated layers; negative resistance; switching conduction; switching phenomena;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780069
  • Filename
    4240857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=945116