Reliable 1-W CW operation of high-brightness tapered diode lasers at 735 nm

Author

Sumpf, Bernd ; Beister, Gert ; Erbert, Götz ; Fricke, Jörg ; Knauer, Arne ; Ressel, Peter ; Tränkle, Günther

Author_Institution

Ferdinand Braun Inst., Berlin, Germany

Volume

16

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

984

Lastpage

986

Abstract

The long-term stability of high-brightness diode lasers at 735 nm was investigated. The diodes consist of an index-guided straight section and a gain-guided tapered section. A 1-W continuous-wave operation for 2-mm-long tapered lasers over 3200 h is reported. The experiments demonstrate high reliability with degradation rates below 3.2×10^-5 h^-1.

Keywords

III-V semiconductors; gallium compounds; laser stability; optical waveguide theory; semiconductor device manufacture; semiconductor device reliability; semiconductor device testing; semiconductor lasers; semiconductor quantum wells; visible spectra; 1 W; 2 mm; 735 nm; CW operation; GaAsP; continuous-wave operation; gain-guided tapered section; high-brightness tapered diode lasers; index-guided straight section; long-term stability; reliability; tensile-strained GaAsP quantum wells; Diode lasers; Etching; Lab-on-a-chip; Laser beams; Laser modes; Manufacturing; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.824949

Filename

1281845